AOWF11N70 700v,11a n-channel mosfet general description product summary v ds i d (at v gs =10v) 11a r ds(on) (at v gs =10v) < 0.87 100% uis tested 100% r g tested symbol v ds the AOWF11N70 is fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac- dc applications.by providing low r ds(on) , c iss and c rss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted 800v@150 drain-source voltage AOWF11N70 700 g d s top view to-262f bottom view g d s g d s AOWF11N70 v gs i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r ja r jc * drain current limited by maximum junction tempera ture. maximum junction-to-case 28 0.22 avalanche current c 120 single pulsed avalanche energy g 240 parameter maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds junction and storage temperature range derate above 25 o c repetitive avalanche energy c t c =25c thermal characteristics 5 power dissipation b v 30 gate-source voltage 11* 7.2* t c =100c a 43 pulsed drain current c continuous drain current t c =25c i d maximum junction-to-ambient a,d c p d v/ns mj 4.5 4 c/w AOWF11N70 units a c mj w w/ o c c/w 65 300 -55 to 150 rev0: dec 2011 www.aosmd.com page 1 of 5 downloaded from: http:///
AOWF11N70 symbol min typ max units 700 800 bv dss / ?tj 0.8 v/ o c 1 10 i gss gate-body leakage current 100 n v gs(th) gate threshold voltage 3 3.8 4.5 v r ds(on) 0.72 0.87 g fs 17 s v sd 0.72 1 v i s maximum body-diode continuous current 11 a i sm 43 a c iss 1430 1793 2150 pf c oss 116 146 190 pf c rss 8.4 10.5 15 pf r g 1.8 3.6 5.4 q g 30 37.5 45 nc q gs 10 nc q gd 15 nc t d(on) 42 ns t r 74 ns t d(off) 103 ns static drain-source on-resistance v gs =10v, i d =5.5a reverse transfer capacitance v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =5.5a forward transconductance turn-on rise time gate source charge gate drain charge diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current v ds =700v, v gs =0v a bv dss maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime turn-off delaytime v gs =10v, v ds =350v, i d =11a, r g =25 gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =560v, i d =11a dynamic parameters v ds =5v, i d =250 a v ds =560v, t j =125c v ds =0v, v gs =30v v drain-source breakdown voltage i d =250a, v gs =0v, t j =25c i d =250a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250a, v gs =0v d(off) t f 62 ns t rr 320 400 480 ns q rr 7.2 9 11 c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =11a,di/dt=100a/ s,v ds =100v body diode reverse recovery charge i f =11a,di/dt=100a/ s,v ds =100v turn-off fall time body diode reverse recovery time a. the value of r ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r ja is the sum of the thermal impedance from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=30mh, i as =4a, v dd =150v, r g =25 ? , starting t j =25 c rev0: dec 2011 www.aosmd.com page 2 of 5 downloaded from: http:///
AOWF11N70 typical electrical and thermal characteristics 0 5 10 15 20 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics - 55 c v ds =40v 25 c 125 c 0.0 0.5 1.0 1.5 2.0 0 5 10 15 20 25 r ds(on) ( ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =5.5a 40 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c voltage 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5:break down vs. junction temperature rev0: dec 2011 www.aosmd.com page 3 of 5 downloaded from: http:///
AOWF11N70 typical electrical and thermal characteristics 0 3 6 9 12 15 0 10 20 30 40 50 60 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =480v i d =11a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) 10 s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 0 3 6 9 12 15 0 25 50 75 100 125 150 current rating i d (a) t case ( c) 1s v ds (volts) figure 10: maximum forward biased safe operating area for AOWF11N70 (note f) t case ( c) figure 9: current de-rating (note b) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance for AOWF11N70 (note f) d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =4.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev0: dec 2011 www.aosmd.com page 4 of 5 downloaded from: http:///
AOWF11N70 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev0: dec 2011 www.aosmd.com page 5 of 5 downloaded from: http:///
|
